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Posts: 2
Registered: ‎07-13-2017
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C8051F912DK vs C8051F901-D-GM Flash Writing Erasing

Hello! This is Albert, from Barcelona.

I'm working in a company's project using the C8051F912 IC.

The company provided the F8051F912DK development kit, used successfully to develop all the project. After that they have prepared a prototype using the C8051F901-D-GM and all the needed components under my specifications.

 

I have been using the prototype to test every HW part and running small FW tests (being monitored with LED's). But everything starts going wrong, on the prototype (D-GM version), when accessing the Flash I run the Page Erase, and also when accessing the XBR1 Port I/O Crossbar Register.

 

The errors affect mainly on the Ports output as well as on the Flash writing process which is not successfully carried.
Have you experienced any similar troubles? Or do you have any hint maybe?

 

Thanks!

 

Posts: 75
Registered: ‎05-19-2016

Re: C8051F912DK vs C8051F901-D-GM Flash Writing Erasing

Hi. From a quick review:

 

C8051F912 = 16k flash (was used on your development kit)

C8051F901 = 8k flash (your prototype)

 

How large is your compiled code? Will the code fit inside the 8k flash?

 

For your flash erase - your custom code or using Silabs tools?

 

reference:

http://www.silabs.com/products/mcu/8-bit/c8051f90x-f91x

Posts: 2
Registered: ‎07-13-2017

Re: C8051F912DK vs C8051F901-D-GM Flash Writing Erasing

mon2, Thank you so much for you answer.

 

After some small modifications it started working when I changed the memory adress I had reserved, which was out of D-GM availability.

 

extern unsigned int code myaddr _at_ 0x1F01;

 

to

 

extern unsigned int code myaddr _at_ 0x1A01;

 

Thanks again!